DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 834

MCU 5V 512K 100-TQFP

DF3052BX25V

Manufacturer Part Number
DF3052BX25V
Description
MCU 5V 512K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3052BX25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3052BX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Appendix D Pin States
D.2
Reset in T
T
the input state. AS, RD, HWR, and LWR go high, and the data bus goes to the high-impedance
state. The address bus is initialized to the low output level 0.5 state after the low level of RES is
sampled. Sampling of RES takes place at the fall of the system clock ( ).
Rev. 3.00 Mar 21, 2006 page 804 of 814
REJ09B0302-0300
1
state of an external memory access cycle. As soon as RES goes low, all ports are initialized to
RES
Internal
reset signal
Address bus
CS
CS
AS
RD (read access)
HWR, LWR
(write access)
Data bus
(write access)
I/O port
0
7
to CS
Pin States at Reset
1
State: Figure D.1 is a timing diagram for the case in which RES goes low during the
1
Figure D.1 Reset during Memory Access (Reset during T
High
High
High
Access to external address
T
1
T
2
T
3
H'000000
1
State)
High impedance
High impedance
High impedance

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