DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 190

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 7 Refresh Controller
2CAS
wide DRAM: one using UCAS and LCAS; the other using UW and LW. These DRAM pins
correspond to H8/3052BF pins as shown in table 7.6.
Table 7.6
H8/3052BF Pin
HWR
LWR
RD
CS
Figure 7.5 (1) shows the interface timing for 2WE DRAM. Figure 7.5 (2) shows the interface
timing for 2CAS DRAM.
Rev. 3.00 Mar 21, 2006 page 160 of 814
REJ09B0302-0300
CAS
CAS and 2WE
CAS
Address
bus
CS
(RAS)
RD
(CAS)
HWR
(UW)
LWR
(LW)
RFSH
AS
Note:
3
3
*
16-bit access
WE
WE
WE Modes: The CAS/WE bit in RFSHCR can select two control modes for 16-bit-
DRAM Pins and H8/3052BF Pins
Figure 7.5 DRAM Control Signal Output Timing (1) (2WE
Row
Read cycle
CAS/WE
UW
LW
CAS
RAS
Column
WE
WE = 0 (2WE
WE
Row
WE
WE
WE Mode)
Write cycle
Column
*
DRAM Pin
CAS/WE
UCAS
LCAS
WE
RAS
WE
WE
WE = 1 (2CAS
Area 3 top address
Refresh cycle
WE Mode)
WE
WE
CAS
CAS Mode)
CAS