DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 204

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 7 Refresh Controller
Operation in Power-Down State: The refresh controller operates in sleep mode. It does not
operate in hardware standby mode. In software standby mode RTCNT is initialized, but RFSHCR,
RTMCSR bits 5 to 3, and RTCOR retain their settings prior to the transition to software standby
mode.
Example: Pseudo-static RAM may have separate OE and RFSH pins, or these may be combined
into a single OE/RFSH pin. Figure 7.17 shows an example of a circuit for generating an OE/RFSH
signal. Check the device characteristics carefully, and design a circuit that fits them. Figure 7.18
shows a setup procedure to be followed by a program.
Rev. 3.00 Mar 21, 2006 page 174 of 814
REJ09B0302-0300
Address
bus
CS
RD
HWR
LWR
RFSH
Figure 7.16 Signal Output Timing in Self-Refresh Mode (PSRAME = 1, DRAME = 0)
Figure 7.17 Interconnection to Pseudo-Static RAM with OE
3
High
H8/3052BF
RFSH
RD
Software standby mode
High-impedance
High-impedance
High-impedance
High-impedance
Oscillator
settling time
OE RFSH
OE/RFSH
OE
OE
/
RFSH Signal (Example)
RFSH
RFSH
PSRAM