DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 204

MCU 5V 512K 100-TQFP

DF3052BX25V

Manufacturer Part Number
DF3052BX25V
Description
MCU 5V 512K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3052BX25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3052BX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 7 Refresh Controller
Operation in Power-Down State: The refresh controller operates in sleep mode. It does not
operate in hardware standby mode. In software standby mode RTCNT is initialized, but RFSHCR,
RTMCSR bits 5 to 3, and RTCOR retain their settings prior to the transition to software standby
mode.
Example: Pseudo-static RAM may have separate OE and RFSH pins, or these may be combined
into a single OE/RFSH pin. Figure 7.17 shows an example of a circuit for generating an OE/RFSH
signal. Check the device characteristics carefully, and design a circuit that fits them. Figure 7.18
shows a setup procedure to be followed by a program.
Rev. 3.00 Mar 21, 2006 page 174 of 814
REJ09B0302-0300
Address
bus
CS
RD
HWR
LWR
RFSH
Figure 7.16 Signal Output Timing in Self-Refresh Mode (PSRAME = 1, DRAME = 0)
Figure 7.17 Interconnection to Pseudo-Static RAM with OE
3
High
H8/3052BF
RFSH
RD
Software standby mode
High-impedance
High-impedance
High-impedance
High-impedance
Oscillator
settling time
OE RFSH
OE/RFSH
OE
OE
/
RFSH Signal (Example)
RFSH
RFSH
PSRAM

Related parts for DF3052BX25V