DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 742

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Appendix B Internal I/O Register
FLMCR1—Flash Memory Control Register 1
Rev. 3.00 Mar 21, 2006 page 712 of 814
REJ09B0302-0300
Note: * The initial value is H'00 in modes 5, 6, and 7 (on-chip flash memory enabled). In modes 1, 2,
Bit
Initial value *
Read/Write
3, and 4 (on-chip flash memory disabled), this register cannot be modified and is always read
as H'FF.
Flash write enable bit
0 When a low level is input to the FWE pin (hardware protection state)
1 When a high level is input to the FWE pin
FWE
R
7
1
Software write enable bit 1
0 Write disabled
1 Write enabled
SWE1
R/W*
6
0
Erase setup bit 1
0 Erase setup cleared
1 Erase setup
ESU1
R/W*
Program setup bit 1
0 Program setup cleared
1 Program setup
5
0
Erase-verify mode 1
(Initial value)
0 Erase-verify mode cleared
1 Transition to erase-verify mode
PSU1
R/W*
4
0
Program-verify mode 1
0 Program-verify mode cleared
1 Transition to program-verify mode
R/W*
(Initial value)
EV1
Erase mode 1
3
0
0 Erase mode cleared
1 Transition to erase mode
(Initial value)
Program mode 1
H'40
R/W*
0 Program mode cleared
1 Transition to program mode
PV1
2
0
(Initial value)
R/W*
E1
1
0
Flash memory
(Initial value)
(Initial value)
(Initial value)
R/W*
P1
0
0