DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 619

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

18.7.4
To erase an individual flash memory block, follow the erase/erase-verify flowchart (single-block
erase) shown in figure 18.13.
The wait times after bits are set or cleared in the flash memory control register (FLMCR1,
FLMCR2) and the maximum number of erase operations (N) are shown in table 21.10 in section
21.2.5, Flash Memory Characteristics.
To erase flash memory contents, make a 1-bit setting for the flash memory area to be erased in
erase block register 1 and 2 (EBR1, EBR2) at least (tsswe) µs after setting the SWE1 and SWE2
bits to 1 in FLMCR1 and FLMCR2. Next, the watchdog timer (WDT) is set to prevent
overerasing due to program runaway, etc. Set a value greater than (tse) ms + (tsesu + tce + tcesu)
µs as the WDT overflow period. Preparation for entering erase mode (erase setup) is performed
next by setting the ESU1 and ESU2 bits in FLMCR1 and FLMCR2. The operating mode is then
switched to erase mode by setting the E1 and E2 bits in FLMCR1 and FLMCR2 after the elapse of
at least (tsesu) µs. The time during which the E1 and E2 bits are set is the flash memory erase
time. Ensure that the erase time does not exceed (tse) ms.
Note: With flash memory erasing, preprogramming (setting all memory data in the memory to
18.7.5
In erase-verify mode, data is read after memory has been erased to check whether it has been
correctly erased.
After the elapse of the fixed erase time, clear the E1 and E2 bits in FLMCR1 and FLMCR2, then
wait for at least (tce) µs before clearing the ESU1 and ESU2 bits to exit erase mode. After exiting
erase mode, the watchdog timer setting is also cleared. The operating mode is then switched to
erase-verify mode by setting the EV1 and EV2 bits in FLMCR1 and FLMCR2. Before reading in
erase-verify mode, a dummy write of H'FF data should be made to the addresses to be read. The
dummy write should be executed after the elapse of (tsev) µs or more. When the flash memory is
read in this state (verify data is read in 16-bit units), the data at the latched address is read. Wait at
least (tsevr) µs after the dummy write before performing this read operation. If the read data has
been erased (all 1), a dummy write is performed to the next address, and erase-verify is performed.
If the read data is unerased, set erase mode again, and repeat the erase/erase-verify sequence as
before. The maximum value for repetition of the erase/erase-verify sequence is indicated by the
maximum erase count (N). When verification is completed, exit erase-verify mode, and wait for at
least (tcev) µs. If erasure has been completed on all the erase blocks, clear bits SWE1 and SWE2
in FLMCR1 and FLMCR2, and leave a wait time of at least (tcswe) µs.
be erased to all 0) is not necessary before starting the erase procedure.
Erase Mode
Erase-Verify Mode
Rev. 3.00 Mar 21, 2006 page 589 of 814
REJ09B0302-0300
Section 18 ROM