DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 612

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 18 ROM
18.7
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes are made by
setting the PSU1, ESU1, P1, E1, PV1, and EV1 bits in FLMCR1 for addresses H'00000 to
H'3FFFF, or the PSU2, ESU2, P2, E2, PV2, and EV2 bits in FLMCR2 for addresses H'40000 to
H'7FFFF.
The flash memory cannot be read while it is being written or erased. Install the program to control
flash memory programming and erasing (programming control program) in the on-chip RAM, in
external memory, or in flash memory outside the address area, and execute the program from
there.
See section 18.1, Notes on Flash Memory Programming/Erasing, for points to be noted when
programming or erasing the flash memory. In the following operation descriptions, wait times
after setting or clearing individual bits in FLMCR1 and FLMCR2 are given as parameters; for
details of the wait times, see section 21.2.5, Flash Memory Characteristics.
Notes: 1. Operation is not guaranteed if bits SWE1, ESU1, PSU1, EV1, PV1, E1, and P1 of
Rev. 3.00 Mar 21, 2006 page 582 of 814
REJ09B0302-0300
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Programming should be performed in the erased state. Do not perform additional
4. Do not program addresses H'00000 to H'3FFFF and H'40000 to H'7FFFF
Also, while a high level is applied to the FWE pin, the watchdog timer should be activated
to prevent overprogramming or overerasing due to program runaway, etc.
Programming/Erasing Flash Memory
FLMCR1 and bits SWE2, ESU2, PSU2, EV2, PV2, E2 and P2 of FLMCR2 are
set/reset by a program in flash memory in the corresponding address areas.
executed if FWE = 0).
programming on previously programmed addresses.
simultaneously. Operation is not guaranteed if this is done.