DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 649

MCU 5V 512K 100-TQFP

DF3052BX25V

Manufacturer Part Number
DF3052BX25V
Description
MCU 5V 512K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3052BX25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3052BX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
20.2
The H8/3052BF has a system control register (SYSCR) that controls the power-down state, and a
module standby control register (MSTCR) that controls the module standby function. Table 20.2
summarizes these registers.
Table 20.2 Control Register
Address *
H'FFF2
H'FF5E
Note: * Lower 16 bits of the address.
20.2.1
Bit
Initial value
Read/Write
SYSCR is an 8-bit readable/writable register. Bit 7 (SSBY) and bits 6 to 4 (STS2 to STS0) control
the power-down state. For information on the other SYSCR bits, see section 3.3, System Control
Register (SYSCR).
System Control Register (SYSCR)
Register Configuration
Name
System control register
Module standby control register
SSBY
Software standby
Enables transition to
software standby mode
R/W
7
0
STS2
R/W
6
0
STS1
Standby timer select 2 to 0
These bits select the
waiting time at exit from
software standby mode
R/W
5
0
STS0
R/W
4
0
Abbreviation
SYSCR
MSTCR
User bit enable
Rev. 3.00 Mar 21, 2006 page 619 of 814
R/W
UE
3
1
NMIEG
NMI edge select
R/W
Section 20 Power-Down State
2
0
R/W
R/W
R/W
Reserved bit
1
1
REJ09B0302-0300
RAM enable
Initial Value
H'0B
H'40
RAME
R/W
0
1

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