DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 649

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

20.2
The H8/3052BF has a system control register (SYSCR) that controls the power-down state, and a
module standby control register (MSTCR) that controls the module standby function. Table 20.2
summarizes these registers.
Table 20.2 Control Register
Address *
H'FFF2
H'FF5E
Note: * Lower 16 bits of the address.
20.2.1
Bit
Initial value
Read/Write
SYSCR is an 8-bit readable/writable register. Bit 7 (SSBY) and bits 6 to 4 (STS2 to STS0) control
the power-down state. For information on the other SYSCR bits, see section 3.3, System Control
Register (SYSCR).
System Control Register (SYSCR)
Register Configuration
Name
System control register
Module standby control register
SSBY
Software standby
Enables transition to
software standby mode
R/W
7
0
STS2
R/W
6
0
STS1
Standby timer select 2 to 0
These bits select the
waiting time at exit from
software standby mode
R/W
5
0
STS0
R/W
4
0
Abbreviation
SYSCR
MSTCR
User bit enable
Rev. 3.00 Mar 21, 2006 page 619 of 814
R/W
UE
3
1
NMIEG
NMI edge select
R/W
Section 20 Power-Down State
2
0
R/W
R/W
R/W
Reserved bit
—
—
1
1
REJ09B0302-0300
RAM enable
Initial Value
H'0B
H'40
RAME
R/W
0
1