DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 672

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 21 Electrical Characteristics
21.2.5
Table 21.10 Flash Memory Characteristics
Conditions:
Item
Programming time *
Erase time *
Reprogramming count
Data retention period
Programming Wait time after SWE bit setting *
Erase
Rev. 3.00 Mar 21, 2006 page 642 of 814
REJ09B0302-0300
Flash Memory Characteristics
1
*
3
*
5
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy
write *
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming count *
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy
write *
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
V
(program/erase operating temperature range)
CC
1
*
2
1
1
= 4.5 V to 5.5 V, AV
*
4
1
*
5
1
1
1
1
1
1
*
*
1
1
1
1
4
1
5
1
CC
1
1
1
1
1
*
= 4.5 V to 5.5 V, V
4
Symbol Min
t
t
N
T
tsswe
tspsu
tsp30
tsp200
tsp10
tcp
tcpsu
tspv
tspvr
tcpv
tcswe
N
tsswe
tsesu
tse
tce
tcesu
tsev
tsevr
tcev
tcswe
N
P
E
DRP
WEC
—
—
100 *
10 *
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
12
8
6
Conditions
Typ
10
100
10.000 *
—
1
50
30
200
10
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
—
SS
= AV
7
Max
200
1200
—
—
—
—
32
202
12
—
—
—
—
—
1000
—
—
100
—
—
—
—
—
120
SS
= 0 V, T
Unit
ms/128
bytes
ms/block
Times
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
a
= 0°C to +75°C
Notes
Programming
time wait
Programming
time wait
Additional
programming
time wait
Erase time
wait