DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 595

MCU 5V 512K 100-TQFP

DF3052BX25V

Manufacturer Part Number
DF3052BX25V
Description
MCU 5V 512K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3052BX25V

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
70
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3052BX25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
18.5
18.5.1
FLMCR1 is an 8-bit register used for flash memory operating mode control. Program-verify mode
or erase-verify mode for addresses H'00000 to H'3FFFF is entered by setting SWE1 bit to 1 when
FWE = 1, then setting the PV1 or EV1 bit. Program mode for addresses H'00000 to H'3FFFF is
entered by setting SWE1 bit to 1 when FWE = 1, then setting the PSU1 bit, and finally setting the
P1 bit. Erase mode for addresses H'00000 to H'3FFFF is entered by setting SWE1 bit to 1 when
FWE = 1, then setting the ESU1 bit, and finally setting the E1 bit. FLMCR1 is initialized by a
power-on reset, and in hardware standby mode and software standby mode. Its initial value is H'80
when a high level is input to the FWE pin, and H'00 when a low level is input. When on-chip flash
memory is disabled, a read will return H'00, and writes are invalid.
Writes are enabled only in the following cases: Writes to bit SWE1 of FLMCR1 enabled when
FWE = 1, to bits ESU1, PSU1, EV1, and PV1 when FWE = 1 and SWE1 = 1, to bit E1 when
FWE = 1, SWE1 = 1 and ESU1 = 1, and to bit P1 when FWE = 1, SWE1 = 1, and PSU1 = 1.
Bit 7—Flash Write Enable Bit (FWE): Sets hardware protection against flash memory
programming/erasing.
Bit 7: FWE
0
1
Bit 6—Software Write Enable Bit 1 (SWE1): Enables or disables flash memory programming
and erasing (applicable addresses: H'00000 to H'3FFFF). Set this bit when setting bits 5 to 0, bits 7
to 0 of EBR1, and bits 3 to 0 of EBR2.
Bit 6: SWE1
0
1
Note: * Do not execute a SLEEP instruction while the SWE1 bit is set to 1.
Bit
Initial value
Read/Write
Register Descriptions
Flash Memory Control Register 1 (FLMCR1)
FWE
1/0
R
7
Description
When a low level is input to the FWE pin (hardware-protected state)
When a high level is input to the FWE pin
Writes disabled
Writes enabled *
[Setting condition]
When FWE = 1
Description
SWE1
R/W
6
0
ESU1
R/W
5
0
PSU1
R/W
4
0
Rev. 3.00 Mar 21, 2006 page 565 of 814
R/W
EV1
3
0
R/W
PV1
2
0
REJ09B0302-0300
R/W
Section 18 ROM
E1
1
0
(Initial value)
R/W
P1
0
0

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