DS72030W200FPV Renesas Electronics America, DS72030W200FPV Datasheet - Page 365

• Manufacturer Part Number: DS72030W200FPV
• Description: MPU, 32BIT, SH7203, ROMLESS, 240QFP
• Manufacturer: Renesas Electronics America
• Series: SH7200r

Specifications of DS72030W200FPV

• Core Size: 32bit
• Program Memory Size: 32KB
• Cpu Speed: 200MHz
• Digital Ic Case Style: QFP
• No. Of Pins: 240
• Supply Voltage Range: 1.1V To 1.3V
• Operating Temperature Range: -20°C To +85°C
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Section 9 Bus State Controller (BSC)
Figures 9.17 and 9.18 show a timing chart in burst read. In burst read, an ACTV command is
output in the Tr cycle, the READ command is issued in the Tc1, Tc2, and Tc3 cycles, the READA
command is issued in the Tc4 cycle, and the read data is received at the rising edge of the external
clock (CKIO) in the Td1 to Td4 cycles. The Tap cycle is used to wait for the completion of an
auto-precharge induced by the READA command in the SDRAM. In the Tap cycle, a new
command will not be issued to the same bank. However, access to another CS space or another
bank in the same SDRAM space is enabled. The number of Tap cycles is specified by the WTRP1
and WTRP0 bits in CS3WCR.
In this LSI, wait cycles can be inserted by specifying each bit in CS3WCR to connect the SDRAM
in variable frequencies. Figure 9.18 shows an example in which wait cycles are inserted. The
number of cycles from the Tr cycle where the ACTV command is output to the Tc1 cycle where
the READ command is output can be specified using the WTRCD1 and WTRCD0 bits in
CS3WCR. If the WTRCD1 and WTRCD0 bits specify one cycles or more, a Trw cycle where the
NOT command is issued is inserted between the Tr cycle and Tc1 cycle. The number of cycles
from the Tc1 cycle where the READ command is output to the Td1 cycle where the read data is
latched can be specified for the CS2 and CS3 spaces independently, using the A2CL1 and A2CL0
bits in CS2WCR or the A3CL1 and A3CL0 bits in CS3WCR and WTRCD0 bit in CS3WCR. The
number of cycles from Tc1 to Td1 corresponds to the SDRAM CAS latency. The CAS latency for
the SDRAM is normally defined as up to three cycles. However, the CAS latency in this LSI can
be specified as 1 to 4 cycles. This CAS latency can be achieved by connecting a latch circuit
between this LSI and the SDRAM.
A Tde cycle is an idle cycle required to transfer the read data into this LSI and occurs once for
every burst read or every single read.
Rev. 3.00 Sep. 28, 2009 Page 333 of 1650
REJ09B0313-0300