MPC8313ZQADDC Freescale Semiconductor, MPC8313ZQADDC Datasheet - Page 465

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MPC8313ZQADDC

Manufacturer Part Number
MPC8313ZQADDC
Description
Microprocessors - MPU 8313 REV2.2 PB NO ENC
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MPC8313ZQADDC

Processor Series
MPC8313
Core
e300
Data Bus Width
16 bit
Maximum Clock Frequency
133 MHz
Program Memory Size
16 KB
Data Ram Size
16 KB
Interface Type
I2C
Mounting Style
SMD/SMT
Package / Case
PBGA
Number Of Programmable I/os
32
Number Of Timers
4

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Freescale Semiconductor
25–27
Bits
24
28
29
Name
TRLX
CHT
SCY
RST
MPC8313E PowerQUICC™ II Pro Integrated Processor Family Reference Manual, Rev. 2
Command hold time. Determines the LFWE negation prior to the command, address, or data change when
the external memory access is handled by the FCM.
Cycle length in bus clocks. Determines:
000 No extra wait states
001 1 bus clock cycle wait state
...
111 7 bus clock cycle wait states
Read setup time. Determines the delay of LFRE assertion relative to sampling of read data when the
external memory access is handled by the FCM.
Timing relaxed. Modifies the settings of timing parameters for slow memories.
0 Normal timing is generated by the FCM.
1 Relaxed timing on the following parameters:
• the number of wait states inserted in command, address, or data transfer bus cycles, when the FCM
• the delay between command/address writes and data write cycles, or the delay between write cycles and
• the delay between a command write and the first sample point of the RDY/BSY pin (connected to LFRB).
• Doubles the number of clock cycles between LCS n assertion and commands.
• Doubles the number of wait states specified by SCY, providing up to 14 wait states.
• Works in conjunction with CST and RST to extend command/address/data setup times.
• Adds one clock cycle to the command/address/data hold times.
• Works in conjunction with CBT to extend the wait time for read/busy status sampling by 16 clock cycles.
• Works in conjunction with EHTR to double hold time on read accesses.
handles the external memory access. Thus it is the main parameter for determining cycle length. The
total cycle length depends on other timing attribute settings.
read cycles from NAND Flash EEPROM. A delay of 4×(2+SCY) clock cycles (TRLX = 0) or 8×(2+SCY)
clock cycles (TRLX = 1) is inserted between the last write and the first data transfer to/from NAND Flash
devices.
LFRB is not sampled until 8×(2+SCY) clock cycles (TRLX = 0) or 16×(2+SCY) clock cycles (TRLX = 1)
have elapsed following the command.
TRLX
TRLX
0
0
1
1
0
0
1
1
Table 10-8. OR
CHT
RST
0
1
0
1
0
1
0
1
The write-enable is negated 0.5 clock cycles before any command, address, or
data change.
The write-enable is negated 1 clock cycle before any command, address, or data
change.
The write-enable is negated 1.5 clock cycles before any command, address, or
data change.
The write-enable is negated 2 clock cycles before any command, address, or data
change.
The read-enable is asserted 0.75 clock cycles prior to any wait states.
The read-enable is asserted 1 clock cycle prior to any wait states.
The read-enable is asserted 0.5 clock cycles prior to any wait states.
The read-enable is asserted 1 clock cycle prior to any wait states.
n
FCM Field Descriptions (continued)
Description
Meaning
Meaning
Enhanced Local Bus Controller
10-17

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