MPC555LFMZP40 Freescale Semiconductor, MPC555LFMZP40 Datasheet - Page 663

IC MCU 32BIT 40MHZ 272-BGA

MPC555LFMZP40

Manufacturer Part Number
MPC555LFMZP40
Description
IC MCU 32BIT 40MHZ 272-BGA
Manufacturer
Freescale Semiconductor
Series
MPC5xxr
Datasheets

Specifications of MPC555LFMZP40

Core Processor
PowerPC
Core Size
32-Bit
Speed
40MHz
Connectivity
CAN, EBI/EMI, SCI, SPI, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
101
Program Memory Size
448KB (448K x 8)
Program Memory Type
FLASH
Ram Size
26K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 2.7 V
Data Converters
A/D 32x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
272-PBGA
Controller Family/series
POWER 5xx
Ram Memory Size
26KB
Cpu Speed
63MIPS
Embedded Interface Type
QSPI, SCI, TouCAN
Operating Temperature Range
-40°C To +125°C
No. Of Pins
272
Rohs Compliant
No
Processor Series
MPC5xx
Core
PowerPC
Data Bus Width
32 bit
Data Ram Size
26 KB
Interface Type
CAN, QSPI, SCI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
101
Operating Supply Voltage
3.3 V to 5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Development Tools By Supplier
MPC555CMEE
Minimum Operating Temperature
- 85 C
On-chip Adc
10 bit, 32 Channel
Cpu Family
MPC55xx
Device Core
PowerPC
Device Core Size
32b
Frequency (max)
40MHz
Total Internal Ram Size
32KB
# I/os (max)
101
Operating Supply Voltage (typ)
5V
Instruction Set Architecture
RISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
272
Package Type
BGA
For Use With
MPC555CMEE - KIT EVAL FOR MPC555
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Lead Free Status / Rohs Status
No

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19.2.2 CMF EEPROM Array Addressing
MPC555
USER’S MANUAL
Bit(s)
27:28
26
29
30
31
The CMF EEPROM array is addressed when an internal access has been initialized
and ADDR[10:13] matches the array hardware mapping address. The CMF array lo-
cation selected is determined by ADDR[14:29] and the bytes are selected by AD-
DR[30:31] and internal SIZE[0:1] information.
internal mapping of the flash array.
Information in the array is accessed in 32-byte pages. For each CMF module, two read
page buffers are assigned to the low order addresses (ADDR[27:31]). The first page
buffer is assigned to blocks zero to three; the second to blocks four to seven (for CMF
Module A) or four to five (for CMF Module B).
Access time for data in the read page buffers is one system clock; access time for an
off-page read is two system clocks. To prevent the BIU from accessing an unneces-
sary page from the array, the CMF EEPROM monitors the U-bus address to determine
whether the required information is within one of the two read page buffers and the ac-
cess is valid for the module. This strategy allows the CMF EEPROM to have a two-
clock read for an off-page access and one clock for an on-page access.
The BIU does not recognize write accesses to the CMF array.
/
MPC556
Name
EPEE
SES
EHV
PE
EPEE pin status bit. The EPEE bit monitors the state of the external program/erase enable
(EPEE) pin. EPEE has a digital filter that requires two consecutive samples to be equal before
the output of the filter changes. The CMF samples EPEE when EHV is asserted and holds the
EPEE state until EHV is negated. EPEE is a read-only bit; writes have no effect.
0 = High voltage operations are not possible
1 = High voltage operations are possible
Refer to
Reserved
Program or erase select. PE configures the CMF EEPROM for programming or erasing. When
PE = 0, the array is configured for programming and if SES = 1 the SIE bit will be write locked.
When PE = 1, the array is configured for erasing and SES will not write lock the SIE bit.
The PE bit is write protected by the SES bit. Writes to CMFCTL will not change PE if SES = 1.
0 = Configure for program operation (default value)
1 = Configure for erase operation
Start-end program or erase sequence. The SES bit is write protected by the HVS and EHV bits,
unless the PAW bits are set to 0b1xx. Writes to CMFCTL will not change SES if HVS = 1 or EHV
= 1. Refer to
0 = CMF EEPROM not configured for program or erase operation
1 = Configure CMF EEPROM for program or erase operation
Enable high voltage. EHV can be asserted only after the SES bit has been asserted and a valid
programming write(s) or erase hardware interlock write has occurred. If an attempt is made to
assert EHV when SES is negated, or if a valid programming write(s) or erase hardware interlock
write has not occurred since SES was asserted, EHV will remain negated.
0 = Program or erase pulse disabled
1 = Program or erase pulse enabled
Table 19-6 CMFCTL Bit Descriptions (Continued)
Freescale Semiconductor, Inc.
19.9.1 E
For More Information On This Product,
19.7.7 Starting and Ending a Program or Erase Sequence
PEE
CDR MoneT FLASH EEPROM
Go to: www.freescale.com
Signal
Rev. 15 October 2000
for more information.
Description
Table 19-6
and
Table 19-7
for more information.
MOTOROLA
show the
19-11

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