R5S77631Y266BGV Renesas Electronics America, R5S77631Y266BGV Datasheet - Page 1904

IC SUPERH MPU ROMLESS 499BGA

R5S77631Y266BGV

Manufacturer Part Number
R5S77631Y266BGV
Description
IC SUPERH MPU ROMLESS 499BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7780r
Datasheet

Specifications of R5S77631Y266BGV

Core Processor
SH-4A
Core Size
32-Bit
Speed
266MHz
Connectivity
Audio Codec, I²C, MMC, SCI, SIM, SIO, SSI, USB
Peripherals
DMA, LCD, POR, WDT
Number Of I /o
107
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.15 V ~ 1.35 V
Data Converters
A/D 4x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
499-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5S77631Y266BGV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 43 Electrical Characteristics
Table 43.6 DC Characteristics (2-c) [USB Transceiver Related Pins]
Condition:
Note: Transceiver related pins: USBP, USBM.
Table 43.7 Permissible Output Currents
Conditions:
Note: To protect chip reliability, do not exceed the output current values in table 43.7.
Rev. 2.00 May 22, 2009 Page 1834 of 1982
REJ09B0256-0200
Item
Power supply voltage
Differential input
sensitivity
Differential common
mode range
Single ended receiver
threshold voltage
Output high voltage
Output low voltage
Tray state leakage
voltage
Item
Permissible output low current
(per pin; DDR1 pins)
Permissible output low current
(per pin; PCI1 pins)
Permissible output low current
(per pin; other than DDR and PCI pins)
Permissible output low current (total)
Permissible output high current
(per pin; DDR1 pins)
Permissible output high current
(per pin; PCI1 pins)
Permissible output high current
(per pin; other than DDR and PCI pins)
Permissible output high current (total)
Ta = −20 to 75°C
V
1.35 V, Ta = −20 to 75°C
CCQ
= VDD_RTC = AV
Symbol
VCCQ
V
V
V
V
V
I
LO
DI
CM
SE
OH
OL
CC
3.0
0.2
0.8
0.8
2.5
−10
Min.
= 3.0 to 3.6 V, V
Symbol
I
ΣI
−I
Σ|−I
OL
OH
OL
OH
|
Typ.
3.3
Min.
CCQ-DDR
Max.
3.6
2.5
2.0
VCCQ
0.3
10
= 2.3 to 2.7 V, VDD = 1.15 to
Typ.
Unit
V
V
V
V
V
V
µA
Max.
16
4
2
120
16
4
2
40
Test
Conditions
(DP) − (DM)
0V < V
IN
Unit
mA
mA
mA
mA
< 3.3V

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