R5S77631Y266BGV Renesas Electronics America, R5S77631Y266BGV Datasheet - Page 1968

IC SUPERH MPU ROMLESS 499BGA

R5S77631Y266BGV

Manufacturer Part Number
R5S77631Y266BGV
Description
IC SUPERH MPU ROMLESS 499BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7780r
Datasheet

Specifications of R5S77631Y266BGV

Core Processor
SH-4A
Core Size
32-Bit
Speed
266MHz
Connectivity
Audio Codec, I²C, MMC, SCI, SIM, SIO, SSI, USB
Peripherals
DMA, LCD, POR, WDT
Number Of I /o
107
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.15 V ~ 1.35 V
Data Converters
A/D 4x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
499-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5S77631Y266BGV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 43 Electrical Characteristics
Table 43.35 USB Electrical Characteristics (Low-Speed)
Notes: Measured with edge control C
43.4.21 LCDC Module Signal Timing
Table 43.36 LCDC Module Signal Timing
Conditions:
Rev. 2.00 May 22, 2009 Page 1898 of 1982
REJ09B0256-0200
Item
Transition time (rise)*
Transition time (fall)*
Rise/fall time matching
Output signal crossover power supply voltage V
Item
LCD_CLK input clock frequency
LCD_CLK input clock rise time
LCD_CLK input clock fall time
LCD_CLK input clock duty
Clock (LCD_CL2) cycle time
Clock (LCD_CL2) high level pulse width
Clock (LCD_CL2) low level pulse width
Clock (LCD_CL2) transition time (rise/fall)
Data (LCD_DATA) delay time
Display enable (LCD_M_DISP) delay time
Horizontal synchronous signal (LCD_CL1) delay time t
Vertical synchronous signal (LCD_FLM) delay time
*
Value within 10% to 90% of the signal power supply voltage.
V
1.35 V, Ta = −20 to 75°C
CCQ
= VDD_RTC = AV
EDGE
CC
= 47 pF and connection of direct resister Rs = 22 Ω.
= 3.0 to 3.6 V, V
Symbol
t
t
t
R
F
RFM
CRS
Symbol
t
t
t
t
t
t
t
t
t
t
t
FREQ
r
f
DUTY
CC
CHW
CLW
CT
DDdo
IDdo
HDdo
VDdo
Min.
75
75
80
1.3
CCQ-DDR
Min.
90
25
7
7
−3.5
−3.5
−3.5
−3.5
= 2.3 to 2.7 V, VDD = 1.15 to
300
300
125
2.0
Max.
Max.
66
3
3
110
3
3
3
3
3
Unit
ns
ns
ns
ns
%
V
Unit
MHz
ns
ns
%
ns
ns
ns
ns
ns
ns
ns
ns
Condition
CL = 200 pF
CL = 600 pF
CL = 200 pF
CL = 600 pF
(TR/TF)
Figure
43.79

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