R5S77631Y266BGV Renesas Electronics America, R5S77631Y266BGV Datasheet - Page 502
R5S77631Y266BGV
Manufacturer Part Number
R5S77631Y266BGV
Description
IC SUPERH MPU ROMLESS 499BGA
Manufacturer
Renesas Electronics America
Series
SuperH® SH7780r
Datasheet
1.R5S77631Y266BGV.pdf
(2056 pages)
Specifications of R5S77631Y266BGV
Core Processor
SH-4A
Core Size
32-Bit
Speed
266MHz
Connectivity
Audio Codec, I²C, MMC, SCI, SIM, SIO, SSI, USB
Peripherals
DMA, LCD, POR, WDT
Number Of I /o
107
Program Memory Type
ROMless
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
1.15 V ~ 1.35 V
Data Converters
A/D 4x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
499-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R5S77631Y266BGV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 502 of 2056
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Section 12 DDR-SDRAM Interface (DDRIF)
12.5
12.5.1
The DDR-SDRAM is accessed with a burst length of 2. Read or write commands that hit the page
are issued continuously and read data continuously.
12.5.2
Since the internal state of the DDR-SDRAM is undefined immediately after a power-on, initialize
the SDRAM according to the following sequence. Otherwise the device may be damaged.
An example of the initialization sequence for the DDR-SDRAM is shown below. For details, see
each memory manufacturer's datasheet.
1. Turn on the four power supplies to the DDR-SDRAM in the following order: VDD, VDDQ,
2. After the power supply, reference voltage, and clock are stabilized, maintain the current state
3. Perform a dummy read to any DDR-SDRAM address.
4. Set MIM to enable the DDR-SDRAM controller, set the endian mode, and so on.
5. Set SDR and STR.
6. Use the SMS field in SCR to enable the CKE pin.
7. Use the SMS field in SCR to issue the all-bank precharge (PREALL) command.
8. Use SDMR to issue the EMRS command and enable the DLL.
Rev. 2.00 May 22, 2009 Page 432 of 1982
REJ09B0256-0200
VREF, and VTT.
for at least 200 µs.
Operation
DDR-SDRAM Access
DDR-SDRAM Initialization Sequence
ACT
ACT
Write data
Figure 12.4 DDR-SDRAM Access
Write command
read command
read data
WR
RD
WR
RD
D
D
WR
RD
D
D
D
WR
RD
D
D
D
D
D
D
D
D
D
D
D
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