MPC561MZP56 Freescale, MPC561MZP56 Datasheet - Page 617

• Manufacturer Part Number: MPC561MZP56
• Manufacturer: Freescale

Specifications of MPC561MZP56

• Cpu Family: MPC56x
• Device Core: PowerPC
• Device Core Size: 32b
• Frequency (max): 56MHz
• Interface Type: QSPI/SCI/SPI/UART
• Total Internal Ram Size: 32KB
• # I/os (max): 56
• Number Of Timers - General Purpose: 22
• Operating Supply Voltage (typ): 2.6/5V
• Operating Supply Voltage (max): 2.7/5.25V
• Operating Supply Voltage (min): 2.5/4.75V
• On-chip Adc: 2(32-chx10-bit)
• Instruction Set Architecture: RISC
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 388
• Package Type: BGA
• Program Memory Type: ROMLess
• Program Memory Size: Not Required
• Lead Free Status / RoHS Status: Not Compliant

The current into the signal (I
equations:
where:
The current into (I
parasitic bipolar transistor (K
where I
A method for minimizing the impact of stress conditions on the QADC64E is to strategically allocate
QADC64E inputs so that the lower accuracy inputs are adjacent to the inputs most likely to see stress
conditions.
Also, suitable source impedances should be selected to meet design goals and minimize the effect of stress
conditions.
Freescale Semiconductor
INJ
is either I
I
IN
V
V
(refer to V
V
(refer to V
R
(10-kΩ resistor in
R
= - K
STRESS
SELECTED
STRESS
EB
BE
IN
N
= Parasitic NPN base/emitter voltage
= Parasitic PNP emitter/base voltage
INJN
) the neighboring signal is determined by the K
* I
INJ
= Source impedance
= Adjustable voltage source
or I
NEGCLAMP
NEGCLAMP
Figure 14-53. Input Signal Subjected to Positive Stress
= Source impedance on channel selected for conversion
V
INJP
IN
INJN
N
V
.
<< 1). The I
STRESS
or I
MPC561/MPC563 Reference Manual, Rev. 1.2
Figure 14-52
I INJP
in
in
+
I INJN
INJP
Appendix F, “Electrical
Appendix F, “Electrical
) under negative or positive stress is determined by the following
=
=
R
R
V STRESS V EB
--------------------------------------------------------------------- -
–
----------------------------------------------------- -
SELECTED
IN
STRESS
(
10K
V STRESS V BE
can be expressed by the following equation:
and
R STRESS
R STRESS
I
INJP
I
IN
Figure 14-53
–
PARASITIC
–
AN
AN
DEVICE
n+1
n
–
V DDA
)
Signal Under
Adjacent
Signal
Characteristics”)
Characteristics”))
Stress
on stressed channel)
N
(current coupling ratio) of the
V
DDA
QADC64E Enhanced Mode Operation
QADC64E PAR
Eqn. 14-1
Eqn. 14-2
14-75