MPC561MZP56 Freescale, MPC561MZP56 Datasheet - Page 888

MPC561MZP56

Manufacturer Part Number
MPC561MZP56
Description
Manufacturer
Freescale
Datasheet

Specifications of MPC561MZP56

Cpu Family
MPC56x
Device Core
PowerPC
Device Core Size
32b
Frequency (max)
56MHz
Interface Type
QSPI/SCI/SPI/UART
Total Internal Ram Size
32KB
# I/os (max)
56
Number Of Timers - General Purpose
22
Operating Supply Voltage (typ)
2.6/5V
Operating Supply Voltage (max)
2.7/5.25V
Operating Supply Voltage (min)
2.5/4.75V
On-chip Adc
2(32-chx10-bit)
Instruction Set Architecture
RISC
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Surface Mount
Pin Count
388
Package Type
BGA
Program Memory Type
ROMLess
Program Memory Size
Not Required
Lead Free Status / RoHS Status
Not Compliant

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CDR3 Flash (UC3F) EEPROM
by blocks 3 and 4. The total erase time for this example is the block erase time, T
since four blocks are erased. In addition, the preprogramming time to program all locations in blocks 1, 2,
3, and 4 to a “0” state needs to be considered when determining the total erase time. The preprogramming
time is dependent on the data already stored in the Flash array before beginning the erase operation.
21.3.8.1
The UC3F EEPROM module requires a sequence of writes to the high voltage control register
(UC3FCTL) and an erase interlock write in order to enable high voltage to the array and shadow
information for erase operation. The required hardware algorithm erase sequence follows.
21-26
1. Write PROTECT[0:7] and SBPROTECT[0:1] to disable protect for the blocks to be erased.
2. Write BLOCK[0:7] and SBBLOCK[0:1] to select the blocks to be erased, PE = 1 and SES = 1 in
3. Execute an erase interlock write to any UC3F array location.
4. Write EHV = 1 in the UC3FCTL register.
5. Read the UC3FCTL register until HVS = 0.
6. Read the UC3FCTL register. Confirm PEGOOD =1.
7. Write EHV = 0 in the UC3FCTL register.
8. Write SES =0 in the UC3FCTL register.
the UC3FCTL register.
Erase Sequence
BLOCK[0:7] and SBBLOCK[0:1] in conjunction with SBEN[0:1]
determine which blocks are selected for erase. Blocks whose BLOCK bits
or enabled small blocks whose SBBLOCK bits are set (equal to 1) get erased
when an erase operation is performed.
The values of the EPEE and B0EPEE inputs are latched with the assertion
of EHV to determine the array protection state for the erase operation. It is
assumed that the EPEE and B0EPEE inputs are setup prior to the assertion
of EHV.
Writing EHV = 0 before HVS = 0 causes the current erase sequence to
ABORT. All blocks being erased must go through another erase sequence
before the UC3F EEPROM can be used reliably.
MPC561/MPC563 Reference Manual, Rev. 1.2
WARNING
NOTE
NOTE
ERASE
Freescale Semiconductor
, multiplied by four

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